| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 371 - 374 | |
| Section | Multi-techniques investigations | |
| DOI | https://doi.org/10.1051/epjap:2004086 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004086
Production of structurally perfect single crystals of CdTe and CdZnTe
Shubnikov Institute of Crystallography, Russian Academy of
Sciences, Leninskii pr. 59, Moscow 119333, Russia
Corresponding author: yurivanov@ns.crys.ras.ru
Received:
26
June
2003
Accepted:
9
December
2003
Published online: 15 July 2004
Single-crystal ingots of CdTe and Cd0,96Zn0.04Te 60–100 mm in diameter were grown by directional solidification using the self-seeding technique. The microstructure of the crystals was checked by optical microscopy, electron microscopy (TEM, SEM and EBIC), cathodoluminescence, and X-ray diffraction. It was found that crystal perfection depends to a large measure on the temperature schedule during Lpostgrowth crystal cooling: special caution should be exercised in the temperature interval including the polymorphous transformation. A direct relationship between optical and electronic properties on the one hand and crystal microstructure on the other hand was established.
PACS: 61.10.Nz – X-ray diffraction / 71.55.Gs – II-VI semiconductors / 68.37.Hk – Scanning electron microscopy (SEM) (including EBIC)
© EDP Sciences, 2004
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