Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||375 - 377|
|Published online||15 July 2004|
Ultrasonically stimulated temperature rise around dislocation: extended defect mapping and imaging
V. Lashkaryov Institute of Semiconductor Physics, National Academy
of Sciences of Ukraine, prospect Nauki 45 Kiev, 03028, Ukraine
Corresponding author: email@example.com
Accepted: 9 December 2003
Published online: 15 July 2004
The nonuniform temperature distribution in a crystal surface during ultrasonic loading has been detected. This effect was associated with a sonic-stimulated temperature rise around dislocations and heating of the nonperfect regions of the samples investigated. The dislocation moved in an ultrasonic field was considered as a linear thermal source. We calculated the temperature distribution around dislocations and determined conditions of the discrete and continuous distribution of thermal sources for HgCdxTe alloys. We also discuss the possibility of using the investigated effect as the basis of a non-destructive technique for extended defect mapping and imaging in crystals.
PACS: 61.72.Lk – Linear defects: dislocations, disclinations / 61.72.Hh – Indirect evidence of dilocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) / 81.70.Pg – Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
© EDP Sciences, 2004
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