| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 375 - 377 | |
| Section | Multi-techniques investigations | |
| DOI | https://doi.org/10.1051/epjap:2004125 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004125
Ultrasonically stimulated temperature rise around dislocation: extended defect mapping and imaging
V. Lashkaryov Institute of Semiconductor Physics, National Academy
of Sciences of Ukraine, prospect Nauki 45 Kiev, 03028, Ukraine
Corresponding author: r_savkina@lycos.com
Received:
4
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
The nonuniform temperature distribution in a crystal surface during ultrasonic
loading has been detected. This effect was associated with a sonic-stimulated
temperature rise around dislocations and heating of the nonperfect regions of
the samples investigated. The dislocation moved in an ultrasonic field was
considered as a linear thermal source. We calculated the temperature
distribution around dislocations and determined conditions of the discrete and
continuous distribution of thermal sources for Hg
CdxTe alloys. We
also discuss the possibility of using the investigated effect as the basis of
a non-destructive technique for extended defect mapping and imaging in
crystals.
PACS: 61.72.Lk – Linear defects: dislocations, disclinations / 61.72.Hh – Indirect evidence of dilocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) / 81.70.Pg – Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
© EDP Sciences, 2004
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