Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||367 - 370|
|Published online||15 July 2004|
Defect imaging in ultra-thin SiGe (100) strain relaxed buffers
Universität Stuttgart, Institut fuer Halbleitertechnik
Pfaffenwaldring 47, D-70569 Stuttgart, Germany
Corresponding author: email@example.com
Accepted: 2 October 2003
Published online: 9 February 2011
Preferential etching is a simple and fast technique to evaluate the structural perfection of a single-crystalline material. In the area of defects, the etching rate of preferential etchants are different, so either hillocks or pits (etch-pits) appear. But most of the etching solutions reveal the defects only in thick layers or bulk materials, and often they are very specific for each material. Hence an appropriate etchant based on the Schimmel solution was developed by us for thin layer investigation. This modified Schimmel solution contains 55 Vol% CrO3 (0.4 M) and 45 Vol% HF (49%). The etch rate of this solution depends on the Ge content and on the degree of relaxation R. For the investigated thin SiGex-heterolayers (x = 0.3–0.5) this solution provides an excellent controllable etch rate (0.12–0.48 µm/min), and shows a good capability of etch pit revealing, so the elucidation of countable etch-pits occurs. We implemented also a method for defect revealing based on the electrochemical capacitance voltage system. The determination of the etch pit density is performed by optical microscopy images (inverted dark-field and differential interference contrast) and by atomic force microscopy.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc. / 61.72.Lk – Linear defects: dislocations, disclinations
© EDP Sciences, 2004
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