Diminution of the activity of B atoms by H-induced defects in H₂ and B₂H₆ co-implanted Si

¹ Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
² Faculty of Informatics, Kansai University, Takatsuki, Osaka, 569-1095, Japan
³ Nissin Electric Co., Kujo-Tonoshiro, Minami-ku, Kyoto 601-8205, Japan
⁴ Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213-0012, Japan

Corresponding author: kyokota@ipcku.kansai-u.ac.jp

Received: 4 July 2003
Accepted: 18 December 2003
Published online: 15 July 2004

Abstract

Diborane and hydrogen ions were co-implanted into silicon using an implanter without an ion analyzer. The samples were annealed at 1000 °C for 30 min in argon atmosphere. Regions containing carriers became narrower with an increasing fraction of H₂ gas in the source mixed gas: for example, carriers were limited only in a narrow region from the surface to m on silicon implanted with a mixed gas of 57% H₂–43% B₂H₆. The width of the region containing carriers was approximately double that (m) on B-implanted silicon. On the other hand, the width of the region containing B atoms on the H₂ and B₂H₆ co-implanted silicon were slightly narrower than that on B-implanted silicon. The region containing inactivated B atoms had a large number of defects and small crystallites.