Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||129 - 132|
|Section||Defects in silicon|
|Published online||15 July 2004|
Diminution of the activity of B atoms by H-induced defects in H2 and B2H6 co-implanted Si
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
2 Faculty of Informatics, Kansai University, Takatsuki, Osaka, 569-1095, Japan
3 Nissin Electric Co., Kujo-Tonoshiro, Minami-ku, Kyoto 601-8205, Japan
4 Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213-0012, Japan
Corresponding author: firstname.lastname@example.org
Accepted: 18 December 2003
Published online: 15 July 2004
Diborane and hydrogen ions were co-implanted into silicon using an implanter without an ion analyzer. The samples were annealed at 1000 °C for 30 min in argon atmosphere. Regions containing carriers became narrower with an increasing fraction of H2 gas in the source mixed gas: for example, carriers were limited only in a narrow region from the surface to m on silicon implanted with a mixed gas of 57% H2–43% B2H6. The width of the region containing carriers was approximately double that (m) on B-implanted silicon. On the other hand, the width of the region containing B atoms on the H2 and B2H6 co-implanted silicon were slightly narrower than that on B-implanted silicon. The region containing inactivated B atoms had a large number of defects and small crystallites.
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 72.80.Cw – Elemental semiconductors / 71.20.Mq – Elemental semiconductors
© EDP Sciences, 2004
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