| Issue |
Eur. Phys. J. Appl. Phys.
Volume 53, Number 3, March 2011
|
|
|---|---|---|
| Article Number | 30403 | |
| Number of page(s) | 6 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2010100330 | |
| Published online | 22 February 2011 | |
https://doi.org/10.1051/epjap/2010100330
Oxidation of ion beam synthesised embedded indium nanoclusters in silica
1
Materials Science Centre, Department of Nuclear Physics, University of Madras, Chennai, 600025, India
2
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India
3
Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India
Corresponding author: kgmn@igcar.gov.in
Received:
26
August
2010
Revised:
1
December
2010
Accepted:
21
December
2010
Published online:
22
February
2011
The paper discusses the results of a study on the formation of indium oxide nanoclusters in silica samples implanted with high energy indium ions. Trace quantities of indium oxide were found on as-implanted samples. On annealing in vacuum/oxygen atmosphere significant increase in the quantity of indium oxide phase was observed. A mechanism is proposed for the formation of indium oxide and is mainly attributed to the reaction of metallic indium with the oxygen released from the silica matrix by ballistic process. During annealing in oxygen atmosphere the oxygen diffusing into the silica also plays a role in the oxidation of indium NCs.
© EDP Sciences, 2011
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