| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 133 - 135 | |
| Section | Defects in silicon | |
| DOI | https://doi.org/10.1051/epjap:2004058 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004058
Electron irradiation effect on thermal donors in CZ-Si
1
Kumamoto National College of Technology, 2659-2 Nishigoshi
Kumamoto, 861-1102, Japan
2
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
3
University of Hagen, Haldener Str. 182, PO Box 940, D-58084 Hagen, Germany
4
E. E. Dept, K. U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
Corresponding author: takakura@ee.knct.ac.jp
Received:
29
June
2003
Accepted:
5
January
2004
Published online: 15 July 2004
Electrical properties of the shallow thermal donors (TDs) in n-type CZ-Si diodes by the electron irradiation were investigated. After the electron irradiation, carrier concentration was decreased. From deep level transient spectroscopy (DLTS) measurements, some peaks related to TDs and vacancy-oxygen complexes were observed for the irradiated samples. The peak related to V-O and/or A-center at EC-0.18 eV increased with the electron fluence. To compare that, the level of EC-0.09 eV related to TDs was independent of electron fluence. In addition to that, reverse current of the diodes was increased with increasing irradiated electron fluence.
PACS: 81.05.Cy – Elemental semiconductors / 85.30.-z – Semiconductor devices
© EDP Sciences, 2004
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