Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||337 - 340|
|Section||Electron beam methods|
|Published online||15 July 2004|
Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques
Nanomaterials Laboratory, National Institute for Materials
Science, Tsukuba 305-0047, Japan
2 Diamond Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, 305-8565, Japan
3 Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Corresponding author: YUAN.Xiaoli@momokusa.nims.go.jp
Accepted: 15 December 2003
Published online: 15 July 2004
We have characterized threading dislocations (TDs) and misfit dislocations (MDs) in a degraded strained-Si/SiGe heterostructure by using electron beam induced current (EBIC), transmission electron microscopy (TEM) and chemical etching techniques. The strained-Si layer in this degraded heterostructure was selected to be thicker than the critical thickness for introducing MDs at the interface of strained-Si/SiGe. Cross-sectional TEM image reveals that there are dense dislocation network in deep region (graded SiGe layer) and 60° MDs at the upper interface (strained-Si/SiGe interface). The EBIC image taken with a 20 keV electron beam reveals the cross-hatch pattern of MD network in the deep graded SiGe region. The EBIC image taken with a 4 keV electron beam at 65 K shows weak dark spots and two perpendicular sets of weak dark lines, corresponded to TDs and MDs at the upper interface, respectively. Comparison with chemical etching results indicates that the weak dark lines in EBIC image correspond to MD bundles/groups at the upper interface. The electrical activities of these dislocations are discussed by using the temperature dependence of EBIC contrast.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 68.37.Hk – Scanning electron microscopy (SEM) (including EBIC) / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 2004
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