| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 333 - 336 | |
| Section | Electron beam methods | |
| DOI | https://doi.org/10.1051/epjap:2004119-6 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004119-6
Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures
1
Departamento de Física de la Materia Condensada, Escuela
Técnica Superior de Ingenieros Industriales, Paseo del Cauce s/n, 47011
Valladolid, Spain
2
IMEM-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini 43010
Parma, Italy
Corresponding author: oscar@fmc.uva.es
Received:
24
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
GaInP layers were grown on GaAs substrates by MOVPE at low pressure in the temperature range between 525 and 600 °C. A detailed analysis of the optical properties of these samples was performed by means of Photoluminescence, Cathodoluminescence and microRaman spectroscopies, aiming to understand the contributions of composition fluctuations, strain, Cu-Pt type ordering, etc., to the properties of the layers. The composition gradients due to the horizontal flow reactor were specifically evaluated by Photoluminescence mapping. The luminescence parameters were analysed in terms of composition, order and strain by Cathodoluminescence imaging. On the other hand, ordering was observed to depend on the growth rate.
PACS: 78.55.Cr – III-V semiconductors / 78.60.Hk – Cathodoluminescence, ionoluminescence / 81.15.Kk – Vapor phase epitaxy; growth from vapor phase
© EDP Sciences, 2004
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