Eur. Phys. J. AP
Volume 12, Number 1, October 2000
|Page(s)||55 - 60|
|Published online||15 October 2000|
Transmission electron microscopy of NdNiO3 thin films on silicon substrates
Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du
Maine, 72085 Le Mans Cedex 9, France
2 Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France
3 EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium
Corresponding author: firstname.lastname@example.org
Revised: 18 September 2000
Accepted: 19 September 2000
Published online: 15 October 2000
The microstructure of NdNiO3 thin films deposited on Si (100) has been investigated by high resolution electron microscopy. Deposition at 250 °C and 600 °C and several annealing at high temperature under oxygen pressure were performed. Depending on the deposition temperature and annealing conditions, different texture and microstructure were observed. Relationships between microstructure and transport properties are discussed. The differences of grain boundaries are suggested to be responsible for the difference in transport properties of the films.
PACS: 73.50.-h – Electronic transport phenomena in thin films and low-dimensional structures / 71.30.+h – Metal–insulator transitions and other electronic transitions
© EDP Sciences, 2000
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