Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||357 - 361|
|Section||Defect mapping over large area wafers|
|Published online||15 July 2004|
Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
Institute for Materials Science 6, University of Erlangen,
Martensstr.7, D-91058 Erlangen, Germany
2 Crystal Growth Laboratory, Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Schottkystr. 10, D-91058 Erlangen, Germany
3 Freiberger Compound Materials GmbH, Am Junger Löwe Schacht 5, D-09599 Freiberg, Germany
Corresponding author: firstname.lastname@example.org
Accepted: 31 December 2003
Published online: 15 July 2004
We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots were determined in the charge carrier concentration range of 3 × 1017 m−3... 1 × 1018 cm−3 (range of trust up to 3 × 1018 cm−3) which is technically relevant for applications of GaAs wafers as substrate for laser and light emitting diodes. The error of the optical technique is in the range of 10% ... 15% and is comparable to electrical Hall measurements. The sensitivity of the setup, i.e. smallest detectable variation of doping (and hence charge carrier) concentration, is less than 1% in an area of 5 × 5 mm2 and about 20% across the 3 inch area. Absorption mappings of the charge carrier and hence doping homogeneity are presented for n-type GaAs:Si and GaAs:Te.
PACS: 71.55.Eq – III-V semiconductors / 78.20.-e – Optical properties of bulk materials and thin films / 78.40.Fy – Semiconductors
© EDP Sciences, 2004
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