Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||357 - 361|
|Section||Defect mapping over large area wafers|
|Published online||15 July 2004|
Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping
Institute for Materials Science 6, University of Erlangen,
Martensstr.7, D-91058 Erlangen, Germany
2 Crystal Growth Laboratory, Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Schottkystr. 10, D-91058 Erlangen, Germany
3 Freiberger Compound Materials GmbH, Am Junger Löwe Schacht 5, D-09599 Freiberg, Germany
Corresponding author: email@example.com
Accepted: 31 December 2003
Published online: 15 July 2004
We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots were determined in the charge carrier concentration range of 3 × 1017 m−3... 1 × 1018 cm−3 (range of trust up to 3 × 1018 cm−3) which is technically relevant for applications of GaAs wafers as substrate for laser and light emitting diodes. The error of the optical technique is in the range of 10% ... 15% and is comparable to electrical Hall measurements. The sensitivity of the setup, i.e. smallest detectable variation of doping (and hence charge carrier) concentration, is less than 1% in an area of 5 × 5 mm2 and about 20% across the 3 inch area. Absorption mappings of the charge carrier and hence doping homogeneity are presented for n-type GaAs:Si and GaAs:Te.
PACS: 71.55.Eq – III-V semiconductors / 78.20.-e – Optical properties of bulk materials and thin films / 78.40.Fy – Semiconductors
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.