| Issue |
Eur. Phys. J. AP
Volume 5, Number 1, January 1999
|
|
|---|---|---|
| Page(s) | 91 - 94 | |
| DOI | https://doi.org/10.1051/epjap:1999114 | |
| Published online | 15 January 1999 | |
https://doi.org/10.1051/epjap:1999114
Annealing of radiation damage in MOS devices: Study by diode parameter determination
1
Département de Génie Électrique, Université My
Ismaïl-F.S.T, BP 509, Errachidia, Marocco
2
Laboratoire de Caractérisation
des Composants à Semiconducteurs, Université Chouaïb Doukkali,
BP
20, El Jadida, Marocco
Received:
21
November
1998
Revised:
24
April
1998
Accepted:
1
September
1998
Published online: 15 January 1999
Previous modeling techniques of P–N junctions have been applied for studying the annealing of Gamma-ray damage in power MOSFETs. The degradation of the physical parameters of the body-drain junction for a dose rate of 103.8 rad/min is presented. Large decrease of the reverse recombination current, of the series resistance and of the ideality factor are shown to be related to the thermal anneal. These effects are discussed and explained by the evolution of the radiation-induced defects.
PACS: 73.40.Qv – Metal insulator semiconductor structures (including semiconductor-to-insulator) / 61.80.Ed – γ-ray effects / 73.20.-r – Surface and interface electron states
© EDP Sciences, 1999
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