Eur. Phys. J. AP
Volume 1, Number 2, February 1998
|Page(s)||159 - 162|
|Published online||15 February 1998|
Topological and chemical disorder in group-IV amorphous semiconductors*
Département de Physique, Faculté des Sciences de Sfax
3038 Sfax, Tunisie
2 Laboratoire de Physique des Solides (ERS 5646 CNRS), Université Paul-Sabatier, 31062 Toulouse, France
Revised: 11 July 1997
Accepted: 13 November 1997
Published online: 15 February 1998
Raman scattering can be used as an efficient probe with regard to the understanding of local structure in highly disordered films. This investigation is particularly fruitful if one takes into account Stokes, anti-Stokes and multiple-order processes. The interpretation is given in terms of the whole density of vibrational states. Some recent results obtained with amorphous Si, SiC and C films are presented. Comparison with other techniques, including numeric modelisations, are discussed.
PACS: 61.43.Dq – Amorphous semiconductors, metals and alloys / 63.20.Pw – Localized modes / 63.50.+x – Vibrational states in disordered systems
© EDP Sciences, 1998
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