| Issue |
Eur. Phys. J. AP
Volume 1, Number 2, February 1998
|
|
|---|---|---|
| Page(s) | 153 - 157 | |
| DOI | https://doi.org/10.1051/epjap:1998130 | |
| Published online | 15 February 1998 | |
https://doi.org/10.1051/epjap:1998130
Origin of the photoluminescence shifts in porous silicon*
1
Institut National de Recherche Scientifique et Technique,
Laboratoire de Photovoltaïque et des Matériaux
Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
2
Laboratoire de Spectroscopie Raman, Département de Physique,
Faculté des Sciences de Tunis, 1006 Le Belvédère,
Tunis, Tunisie
Received:
4
February
1997
Revised:
1
October
1997
Accepted:
13
November
1997
Published online: 15 February 1998
The origin of the photoluminescence (PL) shifts in Porous Silicon (PS) is discussed according to a quantum confinement – based model, in which we modelize the PS layer as a mixture of quantum dots and wires. It was shown that a PL blueshift or redshift may occur during laser irradiation of PS, depending on preparation conditions. No PL shift was observed for some PS samples, even after a long ageing in air, due to the presence of an amorphous silicon phase detected from Raman spectroscopy measurements. It was found that the presence of the amorphous phase plays an important role in the PL behaviour of oxidised PS.
PACS: 78.30.-j – Infrared and Raman spectra / 78.55.-m – Photoluminescence / 78.55.Mb – Porous materials
© EDP Sciences, 1998
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