Eur. Phys. J. Appl. Phys.
Volume 28, Number 1, October 2004
|Page(s)||19 - 26|
|Section||Semiconductors and Devices|
|Published online||25 June 2004|
Effect of the hydrogen dilution on the short-range and intermediate-range-order in radiofrequency magnetron sputtered hydrogenated amorphous silicon films
Faculté des Sciences de Tunis, Campus Universitaire El Menzeh,
1060 Tunis, Tunisia
2 Faculté des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Tunisia
3 Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d'Amiens, 33 rue Saint-Leu, 80039 Amiens Cedex, France
Corresponding author: Kacem.Zellama@sc.u-picardie.fr
Revised: 6 April 2004
Accepted: 9 April 2004
Published online: 25 June 2004
Raman spectroscopy experiments correlated with infrared absorption, optical transmission and photothermal deflection spectroscopy ones are used to investigate in detail the short-range-order (SRO) and intermediate-range-order (IRO) in hydrogenated amorphous silicon (a-Si:H) films elaborated at high rates (~15 Å/s) by radiofrequency magnetron sputtering with various hydrogen dilution percentage (5 to 20%), leading to different hydrogen-related microstructure and content. The analysis of the transverse optic (TO)- and transverse acoustic (TA)-like modes of the Raman spectra indicates that both, the SRO and IRO are more strongly dependent on the nature of hydrogen bonding configurations, namely the relative proportion of polyhydride Si-H2 and (Si-H2)n complexes and/or clustered monohydride (Si-H)n groups incorporated in the films, rather than on the total bonded hydrogen content. The increase observed in the line width of the TO- and TA-like modes are well correlated with that of the disorder parameter E0, also called Urbach edge parameter, which is related to the exponential absorption from the valence band tails states distribution. Moreover, the analysis of the optical transmission data clearly evidences that the dispersion energy Ed and the static refractive index n0 are also maximum for films having the lowest value of E0, suggesting that they exhibit the highest mean coordination number and compactness respectively, consistent with better SRO and IRO.
PACS: 61.43.Dq – Amorphous semiconductors, metals and alloys / 78.30.-j – Infrared and Raman spectra
© EDP Sciences, 2004
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