| Issue |
Eur. Phys. J. AP
Volume 13, Number 3, March 2001
|
|
|---|---|---|
| Page(s) | 161 - 165 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2001129 | |
| Published online | 15 March 2001 | |
https://doi.org/10.1051/epjap:2001129
Calorimetric studies of chalcogenide glasses in the system Se-S
1
Department of Physics, Faculty of Science, United Arab Emirates
University, PO Box 17551, Al-Ain, United Arab Emirates
2
Institute of Graduate Studies and Research, Alexandria University,
Alexandria, Egypt
3
Department of Physics and Chemistry, Faculty of Education, Damanhour,
Alexandria University, Egypt
4
Department of Physics, Faculty of Science, Alexandria University,
Alexandria, Egypt
Corresponding author: o.elshazly@uaeu.ac.ae
Received:
9
December
1998
Revised:
6
November
2000
Accepted:
13
December
2000
Published online: 15 March 2001
Differential scanning calorimetry measurements under non-isothermal conditions were performed on the chalcogenide glasses Se98−x Sx Sn2 (x = 8, 18) and Se77 S20 X3 (X = Sn, Pb). The values of the glass transition temperature and crystallization temperature were found to depend on the heating rate. The activation energy for the glass transition and the activation energy for crystallization were calculated from the heating rate-dependence. The thermal stability and the glass forming tendency were calculated and they were found to have the same trend.
PACS: 81.05.Gc – Amorphous semiconductors / 81.70.Pg – Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
© EDP Sciences, 2001
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