| Issue |
Eur. Phys. J. Appl. Phys.
Volume 66, Number 2, May 2014
|
|
|---|---|---|
| Article Number | 20104 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2014130470 | |
| Published online | 05 June 2014 | |
https://doi.org/10.1051/epjap/2014130470
ZnO/PS/p-Si heterojunction properties
Department of Applied Science, University of Technology, 9183
Baghdad, Iraq
a e-mail: mwaleed1987@gmail.com
Received:
5
October
2013
Revised:
5
March
2014
Accepted:
2
May
2014
Published online:
5
June
2014
In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/c-Si/Al due to increasing in depletion layer junction compere with PS layer.
© EDP Sciences, 2014
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