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Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 231-233

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Structural characterisation of 4H-SiC substrates by cathodoluminescence and X-ray topography

P. Hidalgo, L. Ottaviani, H. Idrissi, M. Lancin, S. Martinuzzi and B. Pichaud

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 231-233

Published online: 15 July 2004

DOI: https://doi.org/10.1051/epjap:2004100

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The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

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