Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
---|---|---|
Page(s) | 231 - 233 | |
Section | Defects in wide bandgap materials 1 | |
DOI | https://doi.org/10.1051/epjap:2004100 | |
Published online | 15 July 2004 |
https://doi.org/10.1051/epjap:2004100
Structural characterisation of
4H-SiC substrates by
cathodoluminescence and X-ray topography
1
Laboratoire TECSEN, UMR 6122, Université de Marseille
St Jérome case 231, 13397 Marseille, Cedex 20, France
2
Dpto. Fisica de Materiales, Fac. Ciencias Fisicas - UCM. Ciudad Universitaria,
28040 Madrid, Spain
Corresponding author: phidalgo@fis.ucm.es
Received:
2
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
Silicon Carbide (SiC) is a wide band gap
semiconductor, having opto-electronic properties that are suitable for
many applications. Some structural defects due to crystal growth
and/or doping technologies are commonly present in the substrates
of SiC. The -oriented 4H-SiC bulk wafers are
particularly investigated, due to some advantages with respect to
the (0001)-Si face. One of these advantages is a better crystal
reordering during post-implantation annealing. In this paper
cathodoluminescence (CL) and X-Ray topography measurements have
been carried out in order to investigate the optical and
structural properties of commercial
4H n+-type
substrates.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.72.-y – Defects and impurities in crystals; microstructure / 78.60.Hk – Cathodoluminescence, ionoluminescence
© EDP Sciences, 2004
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