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Cited article:

Structural characterisation of 4H-SiC substrates by cathodoluminescence and X-ray topography

P. Hidalgo, L. Ottaviani, H. Idrissi, M. Lancin, S. Martinuzzi, B. Pichaud

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 231-233

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004100

This article has been cited by the following article(s):

Defect Inspection Techniques in SiC

Po-Chih Chen, Wen-Chien Miao, Tanveer Ahmed, et al.
Nanoscale Research Letters 17 (1) (2022)
https://doi.org/10.1186/s11671-022-03672-w

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC()

S.M. Bishop, C.L. Reynolds, J.C. Molstad, et al.
Applied Surface Science 255 (13-14) 6535 (2009)
https://doi.org/10.1016/j.apsusc.2009.02.036