Results of analytical ptychography of monolayer MoS₂, applied on the multislice electron diffraction simulation presented in Section 2.3, given α = 60 mrad. Calculations are done for a variety of average numbers of electrons per pattern $N_{e^{-}}$, and corresponding doses D given in e⁻/Ų. For each case, the position-dependent measurement of the projected potential $\mu \left({\displaystyle \overrightarrow{r}}\right)$, through the iCoM, SBI-D and WDD methods, is displayed alongside the square root of its Fourier transform's amplitude $\sqrt{\left|{\displaystyle \tilde{\mu }}\left({\displaystyle \overrightarrow{Q}}\right)\right|}$. The colorbars reflect values of projected potential in the $\mu \left({\displaystyle \overrightarrow{r}}\right)$ measurements, in V⋅nm.