| Issue |
Eur. Phys. J. Appl. Phys.
Volume 99, 2024
|
|
|---|---|---|
| Article Number | 9 | |
| Number of page(s) | 6 | |
| DOI | https://doi.org/10.1051/epjap/2024230169 | |
| Published online | 09 April 2024 | |
https://doi.org/10.1051/epjap/2024230169
Original Article
Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates
1
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla 72570, Mexico
2
Grupo de Electrónica y Semiconductores, Facultad de Ciencias, c/ Francisco Tomás y Valiente 7, Universidad Autónoma de Madrid, Madrid 28049, España
* e-mail: miguel.dominguezj@correo.buap.mx
Received:
2
September
2023
Accepted:
7
February
2024
Published online: 9 April 2024
In this work, the characterization of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn3N2 and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage VT was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions.
Key words: Detectivity / responsivity / thin-film transistors / zinc nitride
© EDP Sciences, 2024
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