| Issue |
Eur. Phys. J. Appl. Phys.
Volume 89, Number 1, January 2020
Disordered Semiconductors: Physics and Applications
|
|
|---|---|---|
| Article Number | 10102 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2020190264 | |
| Published online | 27 March 2020 | |
https://doi.org/10.1051/epjap/2020190264
Regular Article
Study of nanocrystalline silicon-germanium for the development of thin film transistors★
1
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, Mexico
2
Meritorious Autonomous University of Puebla, BUAP, Puebla, Mexico
* e-mail: rturokts@hotmail.com
Received:
2
September
2019
Received in final form:
28
November
2019
Accepted:
17
January
2020
Published online: 27 March 2020
In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.
© EDP Sciences, 2020
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