Eur. Phys. J. Appl. Phys.
Volume 89, Number 1, January 2020
Disordered Semiconductors: Physics and Applications
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||27 March 2020|
Study of nanocrystalline silicon-germanium for the development of thin film transistors★
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, Mexico
2 Meritorious Autonomous University of Puebla, BUAP, Puebla, Mexico
* e-mail: firstname.lastname@example.org
Received in final form: 28 November 2019
Accepted: 17 January 2020
Published online: 27 March 2020
In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.
© EDP Sciences, 2020
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