Eur. Phys. J. Appl. Phys.
Volume 98, 2023
Special Issue on ‘Amorphous alloys and multiscale materials: Fundamental aspects and Energy applications’, edited by Zhao Zhankui, Wang Hongli and Tai Cheuk-Wai
|Number of page(s)||8|
|Section||Semiconductors and Devices|
|Published online||08 May 2023|
The effects of the electric-magnetic barrier on the spin transmission in the multibarrier semiconductor heterostructures
Department of Physics, Payame Noor University (PNU), P.O. Box 19395-4697, Tehran, Iran
* e-mail: email@example.com
Received in final form: 14 February 2023
Accepted: 30 March 2023
Published online: 8 May 2023
In the present paper, we study spin transmission in the multibarrier semiconductor heterostructures based on single particle effective mass approximation. These structures are double-barrier and triple-barrier semiconductor hetero-structures that a metallic ferromagnetic is deposited on them. Using Airy function and magnetic barriers approximated by delta function, we calculate transmission coefficient of tunneling electrons and spin polarization. Our results have shown that the parameters as the height and width of the electrical potential barrier, wave vector parallel to the barrier, applied bias voltage and magnetic field are effective parameters in determination of the transmission coefficient.
© EDP Sciences, 2023
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.