Regular Article

The effects of the electric-magnetic barrier on the spin transmission in the multibarrier semiconductor heterostructures

Department of Physics, Payame Noor University (PNU), P.O. Box 19395-4697, Tehran, Iran

^* e-mail: naseri@pnu.ac.ir

Received: 14 September 2022
Received in final form: 14 February 2023
Accepted: 30 March 2023
Published online: 8 May 2023

Abstract

In the present paper, we study spin transmission in the multibarrier semiconductor heterostructures based on single particle effective mass approximation. These structures are double-barrier and triple-barrier semiconductor hetero-structures that a metallic ferromagnetic is deposited on them. Using Airy function and magnetic barriers approximated by delta function, we calculate transmission coefficient of tunneling electrons and spin polarization. Our results have shown that the parameters as the height and width of the electrical potential barrier, wave vector parallel to the barrier, applied bias voltage and magnetic field are effective parameters in determination of the transmission coefficient.