Regular Article

Dislocation-related conductivity in Au(In)/Cd_1–xZn_xTe(x = 0, 0.1) Schottky contacts

¹ V. Vynnychenko Central Ukrainian State Pedagogical University, 1 st. Shevchenka, Kropyvnytskyi 25006, Ukraine
² V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine, 41 pr. Nauki, Kyiv 03028, Ukraine

^* e-mail: teterkinvladimir@gmail.com

Received: 30 July 2021
Received in final form: 7 October 2021
Accepted: 11 October 2021
Published online: 10 November 2021

Abstract

Dislocation-related conductivity is studied in Schottky contacts Au(In)/Cd_1-xZn_xTe (x = 0, 0.1) prepared on the surface of single crystals modified by multiple irradiation with a ruby laser and mechanical polishing. The contacts were examined by measuring the DC current as a function of the applied bias and temperature as well as the photoelectric response. It is shown that both methods of surface modification result in p-to-n conversion of the conductivity type of the surface layer. The charge transfer in contacts is explained by the formation of dislocation networks buried under the surface. A model of two potential barriers is proposed for the interpretation of the photovoltaic response in contacts. Their existence is associated with compressive strains in the modified surface layer caused by dislocations, which leads to an increase in the band gap and the formation of a heterostructure.