| Issue |
Eur. Phys. J. Appl. Phys.
Volume 94, Number 1, April 2021
|
|
|---|---|---|
| Article Number | 10101 | |
| Number of page(s) | 7 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2021210015 | |
| Published online | 12 April 2021 | |
https://doi.org/10.1051/epjap/2021210015
Regular Article
Nickel and gold identification in p-type silicon through TDLS: a modeling study
Aix Marseille University, Université de Toulon, CNRS, IM2NP, Marseille 13397, France
* e-mail: olivier.palais@univ-amu.fr
Received:
18
January
2021
Accepted:
11
March
2021
Published online: 12 April 2021
In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross section σ and the defect level Et. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.
Note to the reader: Further to the publication of an erratum, the citation of the article was modified on 19 July 2021.
© S. Dehili et al. published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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