| Issue |
Eur. Phys. J. Appl. Phys.
Volume 88, Number 3, December 2019
|
|
|---|---|---|
| Article Number | 30101 | |
| Number of page(s) | 6 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2019190023 | |
| Published online | 05 February 2020 | |
https://doi.org/10.1051/epjap/2019190023
Regular Article
Inverted-heterostructure based device of CH3NH3PbBr3 for Schottky photodiode
1
Department of Physics, Banasthali Vidyapith, Banasthali 304022, India
2
Department of Electronics and Communication Engineering, KIET Group of Institutions, Ghaziabad 201206, Uttar Pradesh, India
* e-mail: ajay_phy@rediffmail.com
Received:
31
January
2019
Received in final form:
5
May
2019
Accepted:
10
December
2019
Published online: 5 February 2020
In this paper, we have presented a device {FTO (Fluorine-doped tin Oxide)/TiO2/hybrid perovskite/Spiro-OMeTAD/Al} of photoconductive material CH3NH3PbBr3 for the photovoltaic applications. TiO2 has been used as an electron transport layer, which plays the vital role of extracting electrons, transporting electrons, blocking holes and also aligned the perfect energy match with CH3NH3PbBr3. The current–voltage (I–V) characteristics of the fabricated device have been analyzed to evaluate the various diode parameters and understand the charge transport properties. We have analyzed of space charge limited conduction (SCLC) region to evaluate the charge carrier mobility and the calculated value was 1.59 × 10−4 cm2 V−1 s−1. The mobility of carrier may also be extract by I–V characteristics with 0–10 V (charge transport graph). The current level in the device increases considerably under light excitation. Furthermore, impedance spectroscopy analysis has been performed to identify the internal circuit parameters of the photoconductive device.
© EDP Sciences, 2020
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