Regular Article

Effective performance improvement of organic thin film transistors by using tri-layer insulators

¹ College of Communication Engineering, Chongqing University, Chongqing 400044, PR China
² Chongqing Normal University, Chongqing 400044, PR China

^* e-mail: zjl4062002@163.com

Received: 3 May 2018
Received in final form: 3 July 2018
Accepted: 5 July 2018
Published online: 18 October 2018

Abstract

Organic thin film transistors (OTFTs) with silicon oxide (SiO₂)/poly(4-vinylphenol) (PVP)/polymethylmethacrylate (PMMA) tri-layer structure (SPP) as dielectric layers have been fabricated. To verify the validity of such tri-layer structure, two different organic semiconductor materials such as p-type pentacene and n-type fluorinated copper phthalo–cyanine (F₁₆CuPc) are both used for fabricating OTFTs. Comparing with the OTFTs even by using PMMA modification, the better interface quality existing between SPP dielectric and organic film leads a higher conductive efficiency for transport carriers in channel. And then the field effect carriers (hole in pentacene OTFTs and electron in F₁₆CuPc OTFTs) mobilities are both increased obviously. Our results show the SPP dielectric structure can be widely used to improve performance of OTFTs.