Issue |
Eur. Phys. J. Appl. Phys.
Volume 73, Number 2, February 2016
|
|
---|---|---|
Article Number | 20201 | |
Number of page(s) | 6 | |
Section | Physics of Organic Materials and Devices | |
DOI | https://doi.org/10.1051/epjap/2016150565 | |
Published online | 29 February 2016 |
https://doi.org/10.1051/epjap/2016150565
Regular Article
Influence of underneath pentacene thickness on performance of p-n heterojunction organic thin film transistors
College of Communication Engineering, Chongqing University, 400044 Chongqing, P.R. China
a e-mail: zjl4062002@163.com
Received:
20
November
2015
Revised:
24
January
2016
Accepted:
28
January
2016
Published online:
29
February
2016
Organic thin film transistors (OTFTs) with heterojunction semiconducting layers composed of p-type pentacene and n-type fluorinated copper phthalocyanine (F16CuPc) have been fabricated. The influence of pentacene film thickness on performance of transistors is carefully investigated. It has been found that, with the increase of pentacene film thickness, the electron mobility increases at first and then decreases intensely. But the shift of VT is opposite comparing with electron mobility. The performance improvement can be attributed to the increase of free electron carriers by band bending at the pentacene/F16CuPc interface, and better F16CuPc film quality grown upon pentacene. Comparing with island growth-mode, layer-by-layer growth-mode of pentacene facilitates the growth of the upper F16CuPc film.
© EDP Sciences, 2016
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