Regular Article

Effect of Schottky-ohmic separation length on the ac properties of planar Schottky barrier diode

Department of Electronic Science, University of Calcutta, 92, Acharyya Prafulla Chandra Road, Kolkata 700009, India

^* e-mail: pcelc@caluniv.ac.in

Received: 16 June 2017
Received in final form: 7 August 2017
Accepted: 14 September 2017
Published online: 27 October 2017

Abstract

The effects of Schottky-ohmic separation length on the capacitance and ac resistance of Al-p-Si Schottky barrier diodes in planar configuration have been studied. It has been found that the capacitance of such devices depends upon the Schottky-ohmic separation length. While the variation of the capacitance with Schottky-ohmic separation length shows a decreasing trend at all measurement frequencies, the ac resistance of the device remains almost constant at high frequency though some nonlinearity with respect to Schottky-ohmic separation length has been noticed at lower frequencies. The dependence of the capacitance of the device with Schottky-ohmic separation length is analyzed and empirical relations are obtained by fitting the experimental data by linear trend lines.