Eur. Phys. J. Appl. Phys.
Volume 80, Number 2, November 2017
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||27 October 2017|
Effect of Schottky-ohmic separation length on the ac properties of planar Schottky barrier diode
Department of Electronic Science, University of Calcutta,
92, Acharyya Prafulla Chandra Road,
* e-mail: firstname.lastname@example.org
Received in final form: 7 August 2017
Accepted: 14 September 2017
Published online: 27 October 2017
The effects of Schottky-ohmic separation length on the capacitance and ac resistance of Al-p-Si Schottky barrier diodes in planar configuration have been studied. It has been found that the capacitance of such devices depends upon the Schottky-ohmic separation length. While the variation of the capacitance with Schottky-ohmic separation length shows a decreasing trend at all measurement frequencies, the ac resistance of the device remains almost constant at high frequency though some nonlinearity with respect to Schottky-ohmic separation length has been noticed at lower frequencies. The dependence of the capacitance of the device with Schottky-ohmic separation length is analyzed and empirical relations are obtained by fitting the experimental data by linear trend lines.
© EDP Sciences, 2017
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