Eur. Phys. J. Appl. Phys.
Volume 72, Number 3, December 2015
|Number of page(s)||7|
|Published online||01 December 2015|
Characterization of Ni-doped TiO2 thin films deposited by dip-coating technique
Laboratoire de Génie Energétique et Génie Informatique, Université Ibn Khaldoun, Tiaret, Algeria
2 Laboratoire de Génie Physique, Université Ibn-Khaldoun, Tiaret, Algeria
3 Laboratoire de Stockage et Valorisation des énergies Renouvelables, USTHB, Alger, Algeria
a e-mail: firstname.lastname@example.org
Revised: 30 September 2015
Accepted: 23 October 2015
Published online: 1 December 2015
Undoped and Ni-doped TiO2 thin films have been prepared by sol-gel dip-coating method on glass and silicon substrates. X-ray diffraction studies show that both TiO2 and Ni-doped TiO2 thin films are of anatase phase with (1 0 1) as preferential orientation. From the UV-visible spectroscopy analysis, all films exhibits a high transparency ~ 80% and shows that the optical band gap decreases from 3.66 to 3.59 eV, which may be related with the phase composition and impurities. Fourier transformed infrared spectroscopy (FTIR) study confirms the presence of Ti-O, Ti=O and O-H bands. Thermal analysis by differential scanning calorimetriy (DSC) shows endothermic reactions between 30 °C and 280 °C and exothermic reactions between 370 °C and 540 °C corresponding to the crystallization of TiO2 in the anatase phase. The Nyquist plots suggests that the equivalent circuit of the films is an RpCp parallel circuit and shows an increase in resistance Rp with increasing the Ni concentration and a decrease in capacity Cp.
© EDP Sciences, 2015
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