Eur. Phys. J. Appl. Phys.
Volume 70, Number 3, June 2015
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||24 June 2015|
Modeling of metal-ferroelectric-insulator-semiconductor structure considering the effects of interface traps
College of Electrical & Information Engineering, Hunan Institute of Engineering, Xiangtan, 411104
Hunan, P.R. China
2 School of Mechanical Engineering, Xiangtan University, 411105 Hunan, P.R. China
a e-mail: email@example.com
Revised: 7 April 2015
Accepted: 15 May 2015
Published online: 24 June 2015
An improved model, in which the interface traps effects are considered, is developed by combining with quantum mechanical model, dipole switching theory and silicon physics of metal-oxide-semiconductor structure to describe the electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) structure. Using the model, the effects of the interface traps on the surface potential (ϕSi) of the semiconductor, the low frequency (LF) capacitance-voltage (C-V) characteristics and memory window of MFIS structure are simulated, and the results show that the ϕSi- V and LF C-V curves are shifted toward the positive-voltage direction and the memory window become worse as the density of the interface trap states increases. This paper is expected to provide some guidance to the design and performance improvement of MFIS structure devices. In addition, the improved model can be integrated into electronic design automation (EDA) software for circuit simulation.
© EDP Sciences, 2015
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.