Eur. Phys. J. Appl. Phys.
Volume 60, Number 3, December 2012
|Number of page(s)||4|
|Published online||12 December 2012|
Charge storage characteristics of atomic layer deposited ZrO2/Al2O3 multilayered films
College of Physics and Electrical Engineering, Anyang Normal University, Anyang 45500, P.R. China
2 School of Mathematics and Statistics, Anyang Normal University, Anyang 45500, P.R. China
3 Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China
a e-mail: firstname.lastname@example.org
Revised: 9 October 2012
Accepted: 14 November 2012
Published online: 12 December 2012
The multilayered films-based charge trap flash memory cells were fabricated by incorporating high-k ZrO2/Al2O3 nanolaminates as charge trapping layer and amorphous Al2O3 as tunneling and blocking layers. The thickness of high-k ZrO2 or Al2O3 film in charge trapping layer after annealing treatment was about 1.5 nm for each layer. The charge storage characteristics of such memory cells were measured, and the results demonstrated that they had a large hysteresis memory window of 3.85 V at a sweeping gate voltage of ±8 V, an excellent endurance up to 105 write/erase cycles and a small charge loss of 9.6% after 10 years.
© EDP Sciences, 2012
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