Interface magnetoelectric effect in the layered heterostructures with Co layers on the polished and ion-beam planarized ceramic PZT substrates

¹ Scientific-Practical Materials Research Centre NAS of Belarus, 19 P. Brovki Street, Minsk 220072, Belarus
² Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow 119991, Russia
³ Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland
⁴ A.A. Galkin Donetsk Physico-Technical Institute, NANU, 83114 Donetsk, Ukraine

^a e-mail: stognij@ifttp.bas-net.by

Received: 6 October 2014
Revised: 28 November 2014
Accepted: 9 December 2014
Published online: 15 January 2015

Abstract

The low-frequency room temperature interface magnetoelectric (ME) effect was observed in the layered heterostructures comprising the ferromagnetic (FM) Co layers and ferroelectric (FE) ceramic substrates on the base of lead zirconate titanate PbZr_0.45Ti_0.55O₃ (PZT). The Co films 1–12 μm in thickness were deposited by ion-beam sputtering/deposition technics onto the 400 μm PZT substrates. Results of X-ray, magnetic and ME experiments have shown the existence of ME effect in Co/PZT/Co and (Co/PZT/Co)₃ heterostructures obtained by the above mentioned techniques being independent on ferromagnetic/ferroelectric interface roughness. The values of ME voltage coefficient in heterostructures with ion-beam planarized PZT surfaces are much higher than that in heterostructures with mechanochemically polished ceramic substrate surfaces. The heterostructures possess ME effect of the same order as those obtained by means of the mechanical bonding of FM and FE sheets with organic binders and have the typical ME hysteresis curves. The structures obtained are perspective for application as energy-independent elements in magnetic field sensors and magnetic memory.