Eur. Phys. J. Appl. Phys.
Volume 63, Number 2, August 2013
|Number of page(s)||7|
|Section||Surfaces and Interfaces|
|Published online||07 August 2013|
Ion-beam sputtering deposition and magnetoelectric properties of layered heterostructures (FM/PZT/FM)n, where FM – Co or Ni78Fe22
Scientific-Practical Materials Research Centre NAS of Belarus, 19 P. Brovki Street, Minsk 220072, Belarus
2 Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland
3 A.A. Galkin Donetsk Physico-Technical Institute, NNU, 83114 Donetsk, Ukraine
4 International Laboratory of High Magnetic Fields and Low Temperatures, 53-421 Wroclaw, Poland
a e-mail: email@example.com
Revised: 17 May 2013
Accepted: 25 June 2013
Published online: 7 August 2013
Magnetoelectric properties of layered heterostructures (FM/PZT/FM)n (n≤ 3) obtained by ion-beam sputtering deposition of ferromagnetic metal (FM), where FM is the cobalt (Co) or permalloy Ni78Fe22, onto ferroelectric ceramic based on lead zirconate titanate (PZT) have been studied. The polished ferroelectric plates in thickness from 400 to 20 μm were subjected to finished treatment by ion-beam sputtering. After plasma activation they were covered by the ferromagnetic films from 1 to 6 μm in thickness. Enhanced characteristics of these structures were reached by means of both the thickness optimization of ferroelectric and ferromagnetic layers and obtaining of ferromagnetic/ferroelectric interfaces being free from defects and foreign impurities. Assuming on the basis of analysis of elastic stresses in the ferromagnetic film that the magnetoelectric effect forms within ferromagnetic/ferroelectric interface, the structures with 2–3 ferromagnetic layers were obtained. In layered heterostructure (Py/PZT/Py)3, the optimal thickness of ferromagnetic film was 2 μm, and outer and inner ferroelectric layers had 20 μm and 80 μm in thickness, respectively. For such structure the maximal magnetoelectric voltage coefficient of 250 mV/(cm Oe) was reached at a frequency 100 Hz in magnetic field of 0.25 T at room temperature. The structures studied can serve as energy-independent elements detecting the change of magnetic or electric fields in electronic devices based on magnetoelectric effect.
© EDP Sciences, 2013
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