Eur. Phys. J. Appl. Phys.
Volume 68, Number 2, November 2014
|Number of page(s)||7|
|Section||Semiconductors and Devices|
|Published online||23 October 2014|
Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder
Université Montpellier 2 and CNRS, Laboratoire Charles Coulomb
UMR 5221, 34095
2 CRHEA-CNRS UPR 10, rue B. Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France
a e-mail: email@example.com
Revised: 10 September 2014
Accepted: 23 September 2014
Published online: 23 October 2014
We present magnetotransport measurements on a high electron density AlGaN/GaN heterostructure with two subbands populated at T = 1.6 K. The transport scattering times, τtr, of each subband are first derived at low magnetic field by taking into account the magneto-intersubband scattering term. Then the quantum scattering times, τq, are extracted from independent Dingle plots, obtained at higher magnetic fields. All scattering times are studied as a function of the total electronic density, increased by the persistent photo-conductivity effect. A standard modelization, based on all common scattering mechanisms, reveals that the transport scattering time is governed by the short-range AlGaN/GaN interface roughness (IR) scattering, whereas the quantum scattering time is due to the smooth potential induced by remote ionized impurities (II) at the GaN surface. This intermediate situation of mixed disorder, where the τtr/τq ratio is greater than one, does not indicate that the mobility is limited by Coulomb scattering. It is due to the unusual condition, .
© EDP Sciences, 2014
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