Eur. Phys. J. Appl. Phys.
Volume 38, Number 2, May 2007
|Page(s)||141 - 145|
|Section||Nanomaterials and Nanotechnologies|
|Published online||21 March 2007|
The analysis of scattering mechanisms in GaN by relaxation time approximation and the comparison by the transport to quantum scattering time ratios
Balikesir University, Department of Physics, Balıkesir, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 16 February 2007
Accepted: 26 February 2007
Published online: 21 March 2007
The effects of conventional scattering mechanisms on the electron Hall mobility in GaN are calculated and analysed. The ratios of the transport to quantum scattering time are also calculated and the ratio is evaluated in closed form without any fitting parameters. The common interpretation of the transport and quantum lifetime ratios by using the analytical equation solutions gives us dominant scattering mechanisms. It has been observed that the ratio is larger for dislocation scattering than for impurity scattering. These both results are compared and summarized that the Coulombic scattering from a charged dislocation core is more dominant than impurity scattering.
PACS: 72.20.Dp – General theory, scattering mechanisms / 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 72.80.Ey – III-V and II-VI semiconductors
© EDP Sciences, 2007
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