Eur. Phys. J. Appl. Phys.
Volume 67, Number 2, August 2014
|Number of page(s)||8|
|Section||Surfaces and Interfaces|
|Published online||01 August 2014|
Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
IFIMAT, UNCentro and CONICET, Pinto 399, B7000GHG
2 Instituto de Física Rosario, CONICET-UNR, Bvrd. 27 de Febrero 210 Bis, S2000EZP Rosario, Argentina
3 Dipartimento di Fisica, Università di Trento and INFN, Gruppo collegato di Trento, Via Sommarive 14, 38123 Povo, Trento, Italy
4 Dipartimento di Ingegneria Meccanica ed Industriale (DIMI), Università di Roma Tre, Via della Vasca Navale 79, 00146 Rome, Italy
5 Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, 38123 Povo, Trento, Italy
6 IFIMAT, UNCentro and CICPBA, Pinto 399, B7000GHG Tandil, Argentina
a e-mail: email@example.com
Revised: 12 June 2014
Accepted: 13 June 2014
Published online: 1 August 2014
It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.
© EDP Sciences, 2014
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