Eur. Phys. J. Appl. Phys.
Volume 66, Number 1, April 2014
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||01 April 2014|
Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices
Department of Electrical Engineering, School of Electrical Engineering and Computer Science, National University of Sciences and Technology, H-12, 44000
2 School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8QQ, UK
a e-mail: firstname.lastname@example.org
Accepted: 3 March 2014
Published online: 1 April 2014
Processes to achieve high spatial resolution ion implantation induced quantum well intermixing in GaAs/AlGaAs superlattices have been developed. Ion implantation has been carried out using various doses of 4 MeV As2+ ion beam, followed by rapid thermal annealing at various temperatures for 60 s. Low temperature photoluminescence measurements reveal a blue-shift up to 90 nm in the energy band-gap. Propagation losses have been characterized in the intermixed waveguides, and losses as low as 0.55 cm−1 have been observed for 0.5 × 1013 cm−2 implantation dose which gives a blue-shift of 68 nm when annealed at 775 °C. The spatial resolution of ~1.2 μm has been observed at the depth of 2 μm inside the epitaxial structure.
© EDP Sciences, 2014
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