Eur. Phys. J. Appl. Phys.
Volume 65, Number 3, March 2014
|Number of page(s)||5|
|Section||Surfaces and Interfaces|
|Published online||03 March 2014|
Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing
210093, P.R. China
2 College of Physics, Qingdao University, Qingdao 266071, P.R. China
a e-mail: firstname.lastname@example.org
Revised: 10 October 2013
Accepted: 28 January 2014
Published online: 3 March 2014
Resistive switching characteristics of Pt/ZrO2/YBa2Cu3O7 sandwiches are investigated for nonvolatile memory applications. Reproducible bipolar resistance switching with an on/off current ratio about 60 and long data retention are achieved. The conduction mechanism obeys Schottky emission in the low resistance state, while Poole-Frankel conduction is predominant in the high resistance state. The resistance switching of Pt/ZrO2/YBa2Cu3O7 sandwiches can be ascribed to migration and redistribution of oxygen vacancies around the ZrO2/YBa2Cu3O7 interface, which switches the conduction between the interface-controlled and the bulk-controlled mechanisms.
© EDP Sciences, 2014
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