Eur. Phys. J. AP
Volume 8, Number 2, September 1999
|Page(s)||105 - 109|
|Published online||15 September 1999|
Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7−δ capacitors after γ-ray irradiation
Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800,
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China
Corresponding author: firstname.lastname@example.org
Revised: 29 July 1999
Accepted: 12 August 1999
Published online: 15 September 1999
PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7−δ (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO3 substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after γ-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization Pr and the absolute coercive field EC increase while the dielectric constant ε decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, Pr and ε decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials.
PACS: 61.80.Ed – γ-ray effects / 77.84.Dy – Niobates, titanates, tantalates, PZT ceramics, etc. / 74.76.Bz – High-Tc films
© EDP Sciences, 1999
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