Eur. Phys. J. Appl. Phys.
Volume 63, Number 2, August 2013
|Number of page(s)||6|
|Published online||27 August 2013|
Properties of nano-crystalline silicon thin film fabricated by electron beam exposure
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
2 Department of Optometry, Kangwon National University, Samcheok, Gangwondo 245-907, Korea
a e-mail: firstname.lastname@example.org
Revised: 22 July 2013
Accepted: 24 July 2013
Published online: 27 August 2013
The crystallization of amorphous silicon thin films by electron beam exposure was studied. Amorphous silicon and silicon dioxide layers were deposited on glass substrate by PECVD at 360 °C. The optimization to crystallize 300 nm thick amorphous silicon film was carried out at a RF power of 300 W, DC voltage of 1500 V, Argon gas flow rate of 3 sccm and a distance between electron beam mesh and sample of 40 mm. High quality nano-crystalline silicon films with an activation energy of 0.47 eV from conductivity, a grain size of 15–45 nm from SEM and Raman crystalline volume fraction of 93.1% were fabricated. We expect that e-beam exposure will be applied to crystallization of amorphous silicon films.
© EDP Sciences, 2013
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