Eur. Phys. J. Appl. Phys.
Volume 63, Number 2, August 2013
|Number of page(s)||5|
|Published online||27 August 2013|
Annealing effect on the magnetic properties of evaporated CoCr thin films
Laboratoire d’Etudes des Surfaces et Interfaces des Matériaux Solides (LESIMS), University Setif 1, 19000 Setif, Algeria
2 UniversitéAbderrahmane Mira, 06000 Béjaia, Algeria
3 IPCMS-GEMME, UMR-CNRS, Université Louis Pasteur, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2, France
a e-mail: kharmouche firstname.lastname@example.org
Revised: 23 June 2013
Accepted: 30 July 2013
Published online: 27 August 2013
Series of CoxCr1−x thin films have been evaporated under vacuum onto monocrystalline silicon substrate, x being atomic percent of cobalt. The thickness ranges from 17 to 220 nm, values measured by Rutherford backscattering spectrometry. The samples have been annealed under vacuum for one hour at 700 °C. The as deposited films show a hexagonal close packed (hcp) structure while the annealed films show both hexagonal close packed and face centered cubic (fcc) structures. While the as deposited films are under a compressive stress, the annealed films, on the contrary, are under a tensile stress. The hysteresis loops present the same features for the as deposited and annealed films concerning the in-plane and out-of-plane anisotropies. Nevertheless, the coercive field is strongly improved for the annealed films. Moreover, these latter films present very high values of the squareness. A squareness value up to 0.96 has been measured. All these results and others are analyzed and discussed.
© EDP Sciences, 2013
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.