Eur. Phys. J. Appl. Phys.
Volume 60, Number 1, October 2012
|Number of page(s)||4|
|Section||Physics of Organic Materials and Devices|
|Published online||23 October 2012|
Impact ionization coefficients of 4H- and 6H-SiC
Centre for Diploma Programmes, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
2 Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
a e-mail: email@example.com
Revised: 21 June 2012
Accepted: 27 September 2012
Published online: 23 October 2012
The Monte Carlo (MC) simulation of electron and hole impact ionization rates for 4H- and 6H-SiC in high electric field is presented. This work focuses on the study of impact ionization rates and impact ionization coefficients since these parameters play a very important role in determining the device performance. In our simulation, the impact ionization rates are obtained by using modified Keldysh equation with a softness factor fitted to the experimental data described by other researchers. The electron and hole impact ionization coefficients in 4H- and 6H-SiC are parameterized at high electric field. The electron and hole impact ionization coefficients for a wide range of electric fields have been successfully derived in our model.
© EDP Sciences, 2012
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