Eur. Phys. J. Appl. Phys.
Volume 58, Number 2, May 2012
|Number of page(s)||7|
|Section||Semiconductors and Devices|
|Published online||09 May 2012|
Polycrystalline silicon thin films on glass deposited from chlorosilane at intermediate temperatures
Instituto de Desarrollo Tecnológico para la Industria Química (INTEC), CONICET-UNL, Güemes 3450, S3000GLN Santa Fe, Argentina
2 Facultad de Ingeniería Química, UNL, Santiago del Estero 2829, S3000AOM Santa Fe, Argentina
a e-mail: firstname.lastname@example.org
Revised: 29 March 2012
Accepted: 30 March 2012
Published online: 9 May 2012
We show that commercial float glass can be used as a substrate to deposit polycrystalline silicon (poly-Si) by chemical vapor deposition from trichlorosilane at temperatures between 740 and 870 °C. By using scanning electron microscopy an average grain size lower than 0.4 μm was observed, with a columnar structure suitable for the electrical conduction in photovoltaic cells. X-ray diffraction reveals a strong (2 2 0) preferential orientation of the films, which is indicative of a low density of intra-grain defects. Atomic force microscope images reveal a conical structure, with a root mean square roughness of ~65 nm for samples of around 3 μm in thickness. This natural texture is a positive characteristic from the point of view of light trapping. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained, as shown by dark conductivity measurements as a function of temperature. The process, the reactants and the substrate used are of low cost and proved to be adequate for direct poly-Si deposition.
© EDP Sciences, 2012
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