Eur. Phys. J. Appl. Phys.
Volume 58, Number 1, April 2012
|Number of page(s)||6|
|Published online||30 March 2012|
Fast Track Article
Experimental study of the delayed threshold phenomenon in a class-A VECSEL
Laboratoire Aimé-Cotton, CNRS-Université Paris Sud 11, 91405 Orsay Cedex, France
2 Institut de Physique de Rennes, UMR CNRS-Université de Rennes I 6251, 35042 Rennes Cedex, France
3 Laboratoire de Photonique et Nanostructures, CNRS, 91460 Marcoussis, France
a e-mail: email@example.com
Revised: 13 March 2012
Accepted: 20 March 2012
Published online: 30 March 2012
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a time delay in the vicinity of the threshold. The evolution of this delay is measured as a function of the modulation frequency and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.
© EDP Sciences, 2012
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