| Issue |
Eur. Phys. J. Appl. Phys.
Volume 55, Number 2, August 2011
International Symposium on Flexible Organic Electronics 2010 (ISFOE)
|
|
|---|---|---|
| Article Number | 23902 | |
| Number of page(s) | 6 | |
| DOI | https://doi.org/10.1051/epjap/2011100428 | |
| Published online | 11 August 2011 | |
https://doi.org/10.1051/epjap/2011100428
Determination of critical island size in para-sexiphenyl islands on SiO2 using capture-zone scaling
1
Institute of Physics, University of Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
2
Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
a e-mail: teichert@unileoben.ac.at
Received:
22
October
2010
Accepted:
26
May
2011
Published online:
11
August
2011
One of the important parameters in understanding the mechanism of the early stage of organic thin-film growth is the critical nucleus size i*. Here, submonolayer films of para-sexiphenyl grown on amorphous silicon dioxide substrates were investigated by means of atomic-force microscopy and have been analyzed using the recently proposed capture-zone scaling. Applying the generalized Wigner surmise we determine from the capture-zone distribution i* at room temperature and 373 K. The results are compared to traditional analysis by island-size scaling and the applicability of the capture-zone scaling is critically discussed with respect to island shape.
© EDP Sciences, 2011
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