Eur. Phys. J. Appl. Phys.
Volume 55, Number 1, July 2011
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||21 July 2011|
Electrical conductivity and dielectric properties of TlInS2 single crystals
Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt
Revised: 4 February 2011
Accepted: 16 February 2011
Published online: 21 July 2011
TlInS2 single crystals were grown by using Bridgman-Stockbauer technique. Measurements of DC conductivity were carried out in parallel (σ//) and perpendicular (σ⊥) directions to the c-axis over a temperature range from 303 to 463 K. The anisotropic behaviour of the electrical conductivity was also detected. AC conductivity and dielectric measurements were studied as a function of both frequency (102–106 Hz) and temperature (297–375 K). The frequency dependence of the AC conductivity revealed that σac(ω) obeys the universal law: σac(ω) = Aωs. The mechanism of the ac charge transport across the layers of TlInS2 single crystals was referred to the hopping over localized states near the Fermi level in the frequency range >3.5 × 103 Hz. The temperature dependence of σac(ω) for TlInS2 showed that σac is thermally activated process. Both of ϵ1 and ϵ2 decrease by increasing frequency and increase by increasing temperature. Some parameters were calculated as: the density of localized states near the Fermi level NF = 1.5 × 1020 eV-1 cm-3, the average time of charge carrier hoping between localized states τ = 3.79 μs and the average hopping distance R = 6.07 nm.
© EDP Sciences, 2011
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