Eur. Phys. J. AP
Volume 16, Number 2, November 2001
|Page(s)||99 - 104|
|Section||Surfaces, Interfaces and Films|
|Published online||15 November 2001|
AC conductivity and dielectric properties of In2S3 films
Physics Department, Faculty of Education, Ain Shams University, Egypt
2 Physics Department, Faculty of Science, Zagazig University, Egypt
Corresponding author: firstname.lastname@example.org
Revised: 19 June 2001
Accepted: 19 June 2001
Published online: 15 November 2001
Stoichiometric In2S3 films were prepared by thermal evaporation technique onto clean glass substrates. According to X-ray investigations, the as-deposited films were in amorphous state. Both the ac conductivity and dielectric constants were measured in the frequency range 100 Hz−100 kHz at different temperatures. Different parameters such as the frequency exponent parameter s, the density of states near the Fermi level , the activation energy and the optical band gap Eg of In2S3 amorphous thin films were estimated. The hopping conduction was recognized as the conduction mechanism for the investigated films.
PACS: 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.61.-r – Electrical properties of specific thin films / 77.55.+f – Dielectric thin films
© EDP Sciences, 2001
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