AC conductivity and dielectric properties of In₂S₃ films

¹ Physics Department, Faculty of Education, Ain Shams University, Egypt
² Physics Department, Faculty of Science, Zagazig University, Egypt

Corresponding author: elfalaky@hotmail.com

Received: 14 March 2000
Revised: 19 June 2001
Accepted: 19 June 2001
Published online: 15 November 2001

Abstract

Stoichiometric In₂S₃ films were prepared by thermal evaporation technique onto clean glass substrates. According to X-ray investigations, the as-deposited films were in amorphous state. Both the ac conductivity and dielectric constants were measured in the frequency range 100 Hz−100 kHz at different temperatures. Different parameters such as the frequency exponent parameter s, the density of states near the Fermi level , the activation energy and the optical band gap E_g of In₂S₃ amorphous thin films were estimated. The hopping conduction was recognized as the conduction mechanism for the investigated films.