| Issue |
Eur. Phys. J. Appl. Phys.
Volume 51, Number 2, August 2010
|
|
|---|---|---|
| Article Number | 20501 | |
| Number of page(s) | 4 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2010092 | |
| Published online | 19 July 2010 | |
https://doi.org/10.1051/epjap/2010092
Correlation of atomic force microscopy and photoluminescence analysis of GaAs nanocrystallites elaborated by electrochemical etching of n+ type GaAs
Laboratoire de Photovoltaïques, Semiconducteurs et Nanostructures, Centre des Recherches et des Technologies de l'Énergie, BP 95, Hammam-Lif, 2050, Tunisia
Corresponding author: tarekcrt@yahoo.fr
Received:
10
April
2010
Accepted:
31
May
2010
Published online:
19
July
2010
GaAs nanocrystallites are elaborated by electrochemical etching of n+ type GaAs substrates. Photoluminescence (PL) and atomic force microscope (AFM) images analysis are used to study the porous layers obtained with different etching times. Two kind of quantum confinement due to the formation of two nanostructures of different sizes are observed from room temperature photoluminescence (RTPL) spectra. The surface topography and the density of grains of the porous GaAs (π-GaAs) samples are investigated using the AFM technique. AFM images showed that the structure of films was nanocrystalline with a grain size close to 7 nm, this was confirmed by photoluminescence spectroscopy (PL) and the effective mass theory.
© EDP Sciences, 2010
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