Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||9 - 12|
|Published online||15 July 2004|
Physical properties of two dimensional nets of quantum InGaAs wires
Lobachevsky State University, 23/3, Gagarin str., 603950
Nizhny Novgorod, Russia
Institute for Physics of Microstructures,
Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod, Russia
Corresponding author: firstname.lastname@example.org
Accepted: 10 February 2004
Published online: 15 July 2004
The objective of this work is to propose new low-dimensional systems such as two-dimensional nets of quantum wires. The preparation method is based on electrochemical etching of multilayer quantum structures, controlled by measurements of the photoluminescence spectra. Modification of the surface structure is also traced with scanning probe microscopy. The process of a porous structure formation in superlattices leads to additional spatial confinement in the InGaAs layer plane through it, to formation of two-dimensional (2D) nets of quantum wires, as well as transformation of two-dimensional (2D) energy spectra of electrons into one-dimensional (1D) spectra. This procedure was realized on structures with a single InGaAs layer and on multilayer periodic structures. Electrophysical measurements of the electron gas characteristics were carried out on porous structures with 2D nets of quantum wires.
PACS: 73.30.+y – Surface double layers, Schottky barriers, and work functions / 73.40.Gk – Tunneling / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species
© EDP Sciences, 2004
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